GENERICO MEM. DDR3 8192 MB 1600 MHZ

Descripción

1.0 FEATURE
• JEDEC STANDARD 1.5V ± 0.075V POWER SUPPLY
• VDDQ = 1.5V ± 0.075V
• PROGRAMMABLE CAS LATENCIES 6,7,8,9,10,11,13
• PROGRAMMABLE ADDITIVE LATENCY(POSTED CAS) : 0, CL - 2, OR CL - 1 CLOCK
• PROGRAMMABLE CAS WRITE LATENCY(CWL) = 5 (DDR3-800), 6 (DDR3-1066), 7 (DDR3-1333), 8 (DDR3-1600) AND 9 (DDR3-1866)
• 400MHZ FCK FOR 800MB/SEC/PIN, 533MHZ FCK FOR 1066MB/SEC/PIN, 667MHZ FCK FOR 1333MB/SEC/PIN, 800MHZ FCK FOR
1600MB/SEC/PIN, 900MHZ FCK FOR 1866MB/SEC/PIN
• BI-DIRECTIONAL DIFFERENTIAL DATA STROBE
• BURST LENGTH: 8 (INTERLEAVE WITHOUT ANY LIMIT, SEQUENTIAL WITH STARTING ADDRESS “000” ONLY), 4 WITH TCCD = 4 WHICH DOES NOT ALLOW SEAMLESS
READ OR WRITE [EITHER ON THE FLY USING A12 OR MRS]
• ON-DIE TERMINATION USING ODT PIN
• 8 INDEPENDENT INTERNAL BANK
• ASYNCHRONOUS RESET
• AVERAGE REFRESH PERIOD 7.8US AT LOWER THAN A TCASE 85°C, 3.9US AT 85°C < TCASE < 95 °C
• SERIAL PRESENCE DETECT WITH EEPROM
• DIMM DIMENSION (NOMINAL) 30.00 MM HIGH, 133.35 MM WIDE
• BASED ON JEDEC STANDARD REFERENCE RAW CARDS LAY OUT.
• ROHS COMPLIANT
• GOLD PLATED CONTACTS